semiconductor quantum well structure meaning in Chinese

半寻体量子阱结构

Hydrogenic impurities in low dimensional semiconductor structures have been studied extensively . electric field applied perpendicularly to the layer of quantum wells can change the optical properties ( abstraction , reflection and photoluminesce - nce ) of semiconductor quantum well structures
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质(如吸收、反射、光致发光等) 。